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LDMOS RF transistors for ISM application

                

      We offer semiconductor solutions that replace conventional magnetrons and work closely with our customers to create completely new applications. Long service life of devices in the most severe operating conditions provides efficiency and stability, which are especially important for this segment. (XR) LDMOS transistors have been specially designed for this range, characterized by  more stable operation even under load mismatch.

 

CO2 Lasers & Plasma       Healthcareе         Particle Accelerators       Industrial Heating    

 

ART2K0FE

 Power LDMOS transistor
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, Broadcast and Communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

 

ART150FE

 Power LDMOS transistor
Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor hasbeen designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.

 

ART35FE

 Power LDMOS transistor
Based on Advanced Rugged Technology (ART) a 35 W LDMOS transistor for ISM application has been designed. This unmatched device covers a frequency range of 1 MHz to 650 MHz.